Document
PPJQ5478
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
60A
DFN5060-8L
Features
RDS(ON) , VGS@10V, ID@30A<12mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN5060-8L Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0028 ounces, 0.08 grams Marking: Q5478
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation
TC=25oC TC=100oC TC=25oC TC=25oC TC=100oC
Continuous Drain Current
TA=25oC TA=70oC
Power Dissipation
TA=25oC TA=70oC
Single Pulse Avalanche Energy(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance(Note 4,5)
Junction to Case Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL VDS VGS ID IDM PD
ID
PD
EAS TJ,TSTG
RθJC RθJA
LIMIT
100 +20 60 38 150 83 33
9 7.5 2.0 1.3 156 -55~150 1.5 62.5
UNITS V V
A
W A A W mJ oC oC/W
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PPJQ5478
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage
SYMBOL
BVDSS VGS(th) RDS(on) IDSS IGSS
Qg Qgs Qgd Ciss Coss Crss td(on)
tr td(off)
tf
IS
VSD
TEST CONDITION
VGS=0V,ID=250uA VDS=VGS, ID=250uA VGS=10V,ID=30A VDS=80V,VGS=0V VGS=+20V,VDS=0V
VDS=50V, ID=30A, VGS=10V (Note 1,2)
VDS=30V, VGS=0V, f=1.0MHZ
VDD=50V, ID=30A, VGS=10V, RG=3Ω (Note 1,2)
--IS=30A,VGS=0V
MIN. TYP. MAX. UNITS
100 - - V 234V - 9 12 mΩ - - 1.0 uA - - +100 nA
- 145 - 25 - 43 - 3921 - 255 - 96 - 27 - 13 - 15 - 43 -
nC pF ns
- - 60 A
-
0.8 1.3
V
NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. Repetitive rating, pulse width limited by junction temperature TJ (MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. 4. The maximum current rating is package limited. 5. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper. 6. The test condition is L=0.5mH, IAS=25A, VDD=25V, VGS=10V 7. Guaranteed by design, not subject to production testing.
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PPJQ5478
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS. August 18,2015-REV.00
Fig.6 Source-Drain Diode Forward Voltage Page 3
PPJQ5478
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature
Fig.10 Capacitance vs. Drain-Source Voltage
Fig.11 Maximum Safe Operating Area August 18,2015-REV.00
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PPJQ5478
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
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PPJQ5478
PART NO PACKING CODE VERSION
Part No Packing Code PJQ5478_R2_00001
Package Type DFN5060-8L
Packing type 3000pcs / 13” reel
Marking Q5478
Version Halogen free
Packaging Information & Mounting Pad Layout
DFN5060-8L Dimension
Unit: mm
DFN5060-8L PAD LATOUT
Unit: mm
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PPJQ5478
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