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PJQ5478 Dataheets PDF



Part Number PJQ5478
Manufacturers Pan Jit International
Logo Pan Jit International
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet PJQ5478 DatasheetPJQ5478 Datasheet (PDF)

PPJQ5478 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 60A DFN5060-8L Features  RDS(ON) , VGS@10V, ID@30A<12mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN5060-8L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0028 ounces, 0.08 grams  Marking: Q54.

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PPJQ5478 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 60A DFN5060-8L Features  RDS(ON) , VGS@10V, ID@30A<12mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN5060-8L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0028 ounces, 0.08 grams  Marking: Q5478 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation TC=25oC TC=100oC TC=25oC TC=25oC TC=100oC Continuous Drain Current TA=25oC TA=70oC Power Dissipation TA=25oC TA=70oC Single Pulse Avalanche Energy(Note 6) Operating Junction and Storage Temperature Range Typical Thermal Resistance(Note 4,5) Junction to Case Junction to Ambient  Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD ID PD EAS TJ,TSTG RθJC RθJA LIMIT 100 +20 60 38 150 83 33 9 7.5 2.0 1.3 156 -55~150 1.5 62.5 UNITS V V A W A A W mJ oC oC/W August 18,2015-REV.00 Page 1 PPJQ5478 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS VSD TEST CONDITION VGS=0V,ID=250uA VDS=VGS, ID=250uA VGS=10V,ID=30A VDS=80V,VGS=0V VGS=+20V,VDS=0V VDS=50V, ID=30A, VGS=10V (Note 1,2) VDS=30V, VGS=0V, f=1.0MHZ VDD=50V, ID=30A, VGS=10V, RG=3Ω (Note 1,2) --IS=30A,VGS=0V MIN. TYP. MAX. UNITS 100 - - V 234V - 9 12 mΩ - - 1.0 uA - - +100 nA - 145 - 25 - 43 - 3921 - 255 - 96 - 27 - 13 - 15 - 43 - nC pF ns - - 60 A - 0.8 1.3 V NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. Repetitive rating, pulse width limited by junction temperature TJ (MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. 4. The maximum current rating is package limited. 5. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper. 6. The test condition is L=0.5mH, IAS=25A, VDD=25V, VGS=10V 7. Guaranteed by design, not subject to production testing. August 18,2015-REV.00 Page 2 PPJQ5478 TYPICAL CHARACTERISTIC CURVES Fig.1 Output Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature Fig.5 On-Resistance Variation with VGS. August 18,2015-REV.00 Fig.6 Source-Drain Diode Forward Voltage Page 3 PPJQ5478 TYPICAL CHARACTERISTIC CURVES Fig.7 Gate-Charge Characteristics Fig.8 Breakdown Voltage Variation vs. Temperature Fig.9 Threshold Voltage Variation with Temperature Fig.10 Capacitance vs. Drain-Source Voltage Fig.11 Maximum Safe Operating Area August 18,2015-REV.00 Page 4 PPJQ5478 TYPICAL CHARACTERISTIC CURVES Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width August 18,2015-REV.00 Page 5 PPJQ5478 PART NO PACKING CODE VERSION Part No Packing Code PJQ5478_R2_00001 Package Type DFN5060-8L Packing type 3000pcs / 13” reel Marking Q5478 Version Halogen free Packaging Information & Mounting Pad Layout DFN5060-8L Dimension Unit: mm DFN5060-8L PAD LATOUT Unit: mm August 18,2015-REV.00 Page 6 PPJQ5478 Disclaimer ● Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. ● Panjit International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. ● Panjit International Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. ● Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. ● Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing .


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