PXAC180602MD

PXAC180602MD Thermally-Enhanced High Power RF LDMOS FET 60 W, 28 V, 1805 – 1880 MHz Description The PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC180602MD Package PG-HB1DSO-4-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 Efficiency 20 75 50 16 Gain 25 12 0 8 PAR @ 0.01% CCDF 4 -25 -50 0 27 pxac180602md_g1 -75 31 35 39 43 47 Average Output Power (dBm) Features Broadband internal input and output matching Asymmetric Doherty design - Main : P1dB = 20 W Typ - Peak : P1dB = 40 W Typ Typical Pulsed CW performance, 1880 MHz, 28 V, 160 µs pulse width, 10% duty cycle, class AB, Doherty Configuration - Output power at P1dB = 10 W - Efficiency = 58% - Gain at P3dB = 19 dB Integrated ESD protection Human Body Model, Class 1B (per ANSI/ESDA/ JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon production Doherty test fixture) VDD = 28 V, IDQ = 80 mA, POUT = 8.9 W avg, VGSPK ...