1SS133

1SS133 Diodes Switching diode 1SS133 !Applications High speed switching !External dimensions (Units : mm) CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 2.7±0.3 29.0±1.0 φ1.8±0.2 ROHM : MSD EIAJ : − JEDEC : DO-34 !Construction Silicon epitaxial planar !Absolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 90 80 400 130 600 300 175 −65~+175 Unit V V mA mA mA mW °C °C !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. − − − − Typ. − − − − Max. 1.2 0.5 2 4 Unit V µA pF ns IF=100mA VR=80V VR=0.5V, f=1MHz VR=6V, IF=10mA, RL=50Ω Conditions 1SS133 Diodes !Electrical characteristics curves (Ta=25°C) CAPACITANCE BETWEEN TERMINALS : CT(pF) 100 50 FORWARD CURRENT : IF (mA) 3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0 3000 REVERSE CURRENT : IR (nA) 100˚C 70˚C 20 10 5 2 1 0.5 0.2 0 Ta=12 5˚C Ta=75 ˚C Ta=25˚C Ta=−25 ˚C 1000 300 50˚C 100 30 10 3 Ta=25˚C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 5 10 15 20 25 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capac...