1SS184

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 1SS184 Ultra High-Speed Switching Applications Unit: mm z Small package: SC-59 z Low forward voltage: VF (3) = 0.9 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 0.9 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation VRM VR IFM IO IFSM P 85 80 300* 100* 2* 150 V V mA mA A mW Junction temperature Storage temperature Tj 125 °C Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC TO-236MOD temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum JEITA SC-59 TOSHIBA 1-3G1F Weight: 0.012 g (typ.) ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 1.5. Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage Reverse current Total capacitance Reverse recovery time Symbol V...