1SS187

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Ultra High Speed Switching Application 1SS187 Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2A Power dissipation P 150 mW Junction temperature Storage temperature range Tj 125 °C JEDEC Tstg −55 to 125 °C JEITA TOSHIBA SC-59 1-3G1D Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics Characteristic Forward voltage Reverse current Total capacitance Reverse recovery tme Symbol VF (1) VF (2) VF (3) IR (1) IR (2) CT trr Test Circuit Test Condit...