1SS193

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application 1SS193 Unit: mm  Small package : SC-59  Low forward voltage : VF (3) = 0.9V (typ.)  Fast reverse recovery time : trr = 1.6ns (typ.)  Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2A Power dissipation Junction temperature Storage temperature range P 150 mW Tj 125 °C JEDEC Tstg −55 to 125 °C JEITA TOSHIBA SC-59 1-3G1B Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) VF (3) IR (1) IR (2) CT trr Test Condition IF =...