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MGBR10L120

UTC

DUAL MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD MGBR10L120 Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L...


UTC

MGBR10L120

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Description
UNISONIC TECHNOLOGIES CO., LTD MGBR10L120 Preliminary DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L120 is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.  FEATURES * Low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR10L120L-T27-R MGBR10L120G-T27-R Note: Pin Assignment: A: Anode K: Common Cathode Package TO-277 Pin Assignment 123 AKA Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-054.a MGBR10L120 Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 120 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 120 120 V V Average Rectified Output Current TC=125°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 160 A Operating Junction Temperature Storage Temperature TJ TSTG -65~+150 -65~+150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL CHARAC...




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