DUAL MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD
MGBR10L120
Preliminary
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR10L...
Description
UNISONIC TECHNOLOGIES CO., LTD
MGBR10L120
Preliminary
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR10L120 is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.
FEATURES
* Low forward voltage drop * High switching speed
SYMBOL
DIODE
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MGBR10L120L-T27-R
MGBR10L120G-T27-R
Note: Pin Assignment: A: Anode K: Common Cathode
Package TO-277
Pin Assignment 123 AKA
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R204-054.a
MGBR10L120
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VRM 120 V
Working Peak Reverse Voltage Peak Repetitive Reverse Voltage
VRWM VRRM
120 120
V V
Average Rectified Output Current
TC=125°C
IO
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
160
A
Operating Junction Temperature Storage Temperature
TJ TSTG
-65~+150 -65~+150
°C °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARAC...
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