MCR264-8

MCR264−4, MCR264−6, MCR264−8 Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation. Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters 400 Amperes Surge Capability Blocking Voltage to 600 Volts Device Marking: Logo, Device Type, e.g., MCR264−4, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage(1) (TJ = *40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open) MCR264−4 MCR264−6 MCR264−8 VDRM, VRRM 200 400 600 Unit Volts On-State RMS Current (TC = 80°C; 180° Conduction Angles) Average On-State Current (TC = 80°C; 180° Conduction Angles) Peak Non-repetitive Surge Current (TC = 80°C) (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Forward Peak Gate Power (Pulse Width ≤ 1.0 μs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 μs, TC = 80°C) Operating Junction Temperature Range IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ 40 A 25 A A 400 450 20 Watts 0.5 Watt 2.0 A −40 to +125 °C Storage Temperature Range Tstg −40 to °C +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall...