MGSF3455XT1

MGSF3455XT1 Preliminary Information Low RDS(on) Small-Signal MOSFETs Single P-Channel Field Effect Transistors These miniature surface mount MOSFETs utilize the High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space http://onsemi.com P−CHANNEL ENHANCEMENT−MODE MOSFET RDS(on) = 80 mW (TYP) DD S DDG CASE 318G−02, Style 1 TSOP 6 PLASTIC 1256 DRAIN 3 GATE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating SOURCE 4 Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Gate−to−Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 255C Drain Current — Pulsed Drain Current (tp 3 10 ms) ID 1.45 A IDM 10 Total Power Dissipation @ TA = 255C PD 400 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance — Junction−to−Ambient RθJA 300 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended e...