1SS226

Switching Diodes Silicon Epitaxial Planar 1SS226 1. Applications Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit S-Mini 1SS226 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-09 2022-11-22 Rev.7.0 1SS226 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 Peak forward current Average rectified current IFM (Note 1) IO (Note 1) 300 mA 100 Power dissipation PD (Note 2), (Note 3) 200 mW (Note 4) 150 Non-repetitive peak forward surge current IFSM (Note 1), (Note 5) 2 A Junction temperature Tj (Note 3) 150 � (Note 4) 125 Storage temperature Tstg (Note 3) -55 to 150 � (Note 4) -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability da...