1SS244

1SS244 Diodes Switching diode 1SS244 !Applications High voltage switching General purpose rectification !External dimensions (Units : mm) CATHODE BAND (BLACK) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) VRM=250V guaranteed. 3) High reliability. 29.0±1.0 2.7±0.3 29.0±1.0 φ1.8±0.2 !Construction Silicon epitaxial planar ROHM : MSD EIAJ : − JEDEC : DO-34 !Absolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 250 220 625 200 1000 300 175 −65~+175 Unit V V mA mA mA mW ˚C ˚C !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. − − − − Typ. − − − − Max. 1.5 10 3 75 Unit V µA pF ns IF=200mA VR=220V Conditions VR=0V, f=1MHz IF=20mA, IR=20mA, RL=50Ω 1SS244 Diodes !Electrical characteristics curves (Ta=25°C) 200 100 FORWARD CURRENT : IF (mA) 10µ 100˚C 1.1 CAPACITANCE BETWEEN TERMINALS : CT (pF) 50 20 10 5 Ta=1 2 75˚C 5˚C 25˚C −25˚C REVERSE CURRENT : IR (A) 1.0 75˚C 1µ 0.9 50˚C 0.8 2 1 0.5 0.2 0 100n Ta=25˚C 0.7 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE : VF (V) 10n 0 50 100 150 200 250 300 350 0.6 0 1 2 3 4 5 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics F...