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NL17SH32 Dataheets PDF



Part Number NL17SH32
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Single 2-Input OR Gate
Datasheet NL17SH32 DatasheetNL17SH32 Datasheet (PDF)

NL17SH32 Single 2-Input OR Gate The NL17SH32 is an advanced high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The NL17SH32 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the NL17SH32 to be used to interface 5 V circuits to 3 V circuits. Features • High Speed: tPD = .

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NL17SH32 Single 2-Input OR Gate The NL17SH32 is an advanced high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The NL17SH32 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the NL17SH32 to be used to interface 5 V circuits to 3 V circuits. Features • High Speed: tPD = 3.7 ns (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Pin and Function Compatible with Other Standard Logic Families • These are Pb−Free Devices IN A 1 GND 2 IN B 3 5 VCC 4 OUT Y Figure 1. Pinout (Top View) IN A ≥ 1 IN B OUT Y Figure 2. Logic Symbol http://onsemi.com MARKING DIAGRAM SOT−953 CASE 527AE FM 1 F = Specific Device Code M = Month Code PIN ASSIGNMENT 1 IN A 2 GND 3 IN B 4 OUT Y 5 VCC FUNCTION TABLE Inputs AB LL LH HL HH Output Y L H H H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2014 April, 2014 − Rev. 2 1 Publication Order Number: NL17SH32/D NL17SH32 MAXIMUM RATINGS Symbol Parameter Value Unit VCC VIN VOUT IIK IOK IOUT ICC TSTG TL TJ PD MSL DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Sink Current DC Supply Current per Supply Pin Storage Temperature Range Lead Temperature, 1 mm from Case for 10 Seconds Junction Temperature Under Bias Power Dissipation in Still Air Moisture Sensitivity −0.5 to +7.0 −0.5 to +7.0 −0.5 to VCC +0.5 −20 ±20 ±25 50 −65 to +150 260 +150 50 Level 1 V V V mA mA mA mA °C °C °C mW FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in ILATCHUP Latchup Performance Above VCC and Below GND at 125°C (Note 1) ±100 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics VCC VIN VOUT TA tr , tf DC Supply Voltage DC Input Voltage DC Output Voltage Operating Temperature Range Input Rise and Fall Time Device Junction Temperature versus Time to 0.1% Bond Failures Junction Temperature °C Time, Hours 80 1,032,200 90 419,300 100 178,700 110 79,600 120 37,000 130 17,800 140 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 NORMALIZED FAILURE RATE TJ = 130°C TJ = 120°C TJ = 110° C TJ = 100°C TJ = 90°C TJ = 80°C VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Min 2.0 0.0 0.0 −55 0 0 Max 5.5 5.5 VCC +125 100 20 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR Unit V V V °C ns/V 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NL17SH32 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions VCC TA = 255C TA v 855C *555C to 1255C (V) Min Typ Max Min Max Min Max Unit VIH Minimum High−Level Input Voltage 2.0 1.5 3.0 2.1 4.5 3.15 5.5 3.85 1.5 1.5 2.1 2.1 3.15 3.15 3.85 3.85 V VIL Maximum Low−Level Input Voltage 2.0 0.5 0.5 0.5 V 3.0 0.9 0.9 0.9 4.5 1.35 1.35 1.35 5.5 1.65 1.65 1.65 VOH Minimum High−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOH = *50 mA 2.0 3.0 4.5 1.9 2.0 2.9 3.0 4.4 4.5 1.9 2.9 4.4 1.9 2.9 4.4 V VIN = VIH or VIL IOH = *4 mA IOH = *8 mA 3.0 4.5 2.58 3.94 2.48 2.34 3.80 3.66 VOL Maximum Low−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 0.0 0.1 0.0 0.1 0.0 0.1 0.1 0.1 0.1 0.1 V 0.1 0.1 VIN = VIH or VIL IOL = 4 mA IOL = 8 mA 3.0 4.5 0.36 0.44 0.36 0.44 0.52 0.52 IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 $0.1 $1.0 $1.0 mA ICC Maximum Quiescent VIN = VCC or GND 5.5 1.0 10 40 mA Supply Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎAC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA = 25°C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol Parameter Test Conditions Min Typ Max ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH, ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPHL Maximum Propagation Delay, Input A or B to Y VCC = 3.3 ± 0.3 V VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF CL = 15 pF CL = 50 pF 4.8 7.9 6.1 11.4 3.7 5.5 4.4 7.5 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCIN MaximumInput ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCapacitance 5.5 10 TA ≤ 85°C Min Max 9.5 13.0 −55 ≤ TA ≤ 125°C Min Max 11.5 15.5 Unit ns 6.5 8.0 8.5 10.0 10 10 pF Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (Note 2) 11 pF 2. CPD is defined as the value of the internal e.


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