Document
NL17SH32
Single 2-Input OR Gate
The NL17SH32 is an advanced high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
The NL17SH32 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the NL17SH32 to be used to interface 5 V circuits to 3 V circuits.
Features
• High Speed: tPD = 3.7 ns (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Pin and Function Compatible with Other Standard Logic Families • These are Pb−Free Devices
IN A 1 GND 2 IN B 3
5 VCC 4 OUT Y
Figure 1. Pinout (Top View)
IN A ≥ 1 IN B OUT Y
Figure 2. Logic Symbol
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MARKING DIAGRAM
SOT−953 CASE 527AE
FM 1
F = Specific Device Code M = Month Code
PIN ASSIGNMENT 1 IN A 2 GND 3 IN B 4 OUT Y 5 VCC
FUNCTION TABLE
Inputs
AB
LL LH HL HH
Output
Y
L H H H
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 2
1
Publication Order Number: NL17SH32/D
NL17SH32
MAXIMUM RATINGS Symbol
Parameter
Value
Unit
VCC VIN VOUT IIK IOK IOUT ICC TSTG TL TJ PD MSL
DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Sink Current DC Supply Current per Supply Pin Storage Temperature Range Lead Temperature, 1 mm from Case for 10 Seconds Junction Temperature Under Bias Power Dissipation in Still Air Moisture Sensitivity
−0.5 to +7.0 −0.5 to +7.0 −0.5 to VCC +0.5
−20 ±20 ±25 50 −65 to +150 260 +150 50 Level 1
V V V mA mA mA mA °C °C °C mW
FR Flammability Rating
Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
ILATCHUP Latchup Performance
Above VCC and Below GND at 125°C (Note 1)
±100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
VCC VIN VOUT TA tr , tf
DC Supply Voltage DC Input Voltage DC Output Voltage Operating Temperature Range Input Rise and Fall Time
Device Junction Temperature versus Time to 0.1% Bond Failures
Junction Temperature °C
Time, Hours
80 1,032,200
90 419,300
100 178,700
110 79,600
120 37,000
130 17,800
140 8,900
Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0
NORMALIZED FAILURE RATE TJ = 130°C TJ = 120°C TJ = 110° C TJ = 100°C TJ = 90°C TJ = 80°C
VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V
Min 2.0 0.0 0.0 −55 0 0
Max 5.5 5.5 VCC +125 100 20
FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR
Unit V V V °C
ns/V
1
1 10
100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
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NL17SH32
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC TA = 255C TA v 855C *555C to 1255C
(V) Min Typ Max Min Max Min
Max Unit
VIH Minimum High−Level Input Voltage
2.0 1.5 3.0 2.1 4.5 3.15 5.5 3.85
1.5 1.5 2.1 2.1 3.15 3.15 3.85 3.85
V
VIL Maximum Low−Level Input Voltage
2.0
0.5 0.5
0.5 V
3.0
0.9 0.9
0.9
4.5
1.35 1.35
1.35
5.5
1.65 1.65
1.65
VOH Minimum High−Level Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL IOH = *50 mA
2.0 3.0 4.5
1.9 2.0 2.9 3.0 4.4 4.5
1.9 2.9 4.4
1.9 2.9 4.4
V
VIN = VIH or VIL IOH = *4 mA IOH = *8 mA
3.0 4.5
2.58 3.94
2.48 2.34 3.80 3.66
VOL Maximum Low−Level Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL IOL = 50 mA
2.0 3.0 4.5
0.0 0.1 0.0 0.1 0.0 0.1
0.1 0.1 0.1
0.1 V 0.1 0.1
VIN = VIH or VIL IOL = 4 mA
IOL = 8 mA
3.0 4.5
0.36 0.44 0.36 0.44
0.52 0.52
IIN Maximum Input Leakage Current
VIN = 5.5 V or GND
0 to 5.5
$0.1
$1.0
$1.0 mA
ICC Maximum Quiescent
VIN = VCC or GND
5.5
1.0 10
40 mA
Supply Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎAC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH, ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPHL
Maximum Propagation Delay, Input A or B to Y
VCC = 3.3 ± 0.3 V VCC = 5.0 ± 0.5 V
CL = 15 pF CL = 50 pF
CL = 15 pF CL = 50 pF
4.8 7.9 6.1 11.4
3.7 5.5 4.4 7.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCIN MaximumInput ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCapacitance
5.5 10
TA ≤ 85°C
Min Max
9.5 13.0
−55 ≤ TA ≤ 125°C
Min Max
11.5 15.5
Unit ns
6.5 8.0 8.5 10.0
10 10 pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 2)
11 pF
2. CPD is defined as the value of the internal e.