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NSM3005NZ Dataheets PDF



Part Number NSM3005NZ
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Small Signal BJT/MOSFET
Datasheet NSM3005NZ DatasheetNSM3005NZ Datasheet (PDF)

Small Signal BJT and MOSFET 30 V, 500 mA, PNP BJT with 20 V, 224 mA, N−Channel MOSFET NSM3005NZ Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Portable Devices Q1 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current VCEO VCBO VEBO IC IB 30 V 40 V 5.0 V 500 mA 50 mA Q2 MAXIMUM RATINGS (TJ = 25°.

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Small Signal BJT and MOSFET 30 V, 500 mA, PNP BJT with 20 V, 224 mA, N−Channel MOSFET NSM3005NZ Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Portable Devices Q1 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current VCEO VCBO VEBO IC IB 30 V 40 V 5.0 V 500 mA 50 mA Q2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Pulsed Drain Current Source Current (Body Diode) TA = 25°C TA = 85°C TA = 25°C Tp = 10 ms VDSS VGS ID IDM IS 20 V ±8 V 224 mA 162 241 673 mA 120 mA THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Operating Junction and Storage Temperature RqJA PD TJ, TSTG 245 0.8 −55 to 150 °C/W W °C Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq [1 oz] including traces). DATA SHEET www.onsemi.com MARKING DIAGRAM 6 UDFN6 CASE 517AT 1 AE MG 1 mCOOLt G AE = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. PIN CONNECTIONS Pin 6 BJT Collector Pin 5 MOSFET Gate Pin 4 MOSFET Source BJT Collector MOSFET Drain Bottom View Pin 1 BJT Emitter Pin 2 BJT Base Pin 3 MOSFET Drain ORDERING INFORMATION Device NSM3005NZTAG Package UDFN6 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 1 June, 2023 − Rev. 4 Publication Order Number: NSM3005NZ/D NSM3005NZ Q1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min OFF CHARACTERISTICS Collector–Base Breakdown Voltage V(BR)CBO IC = 100 mA 40 Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 30 Emitter–Base Breakdown Voltage V(BR)EBO IE = 100 mA 5.0 Collector Cutoff Current ICBO VCB = 25 V, IE = 0 A − Emitter Cutoff Current IEBO VEB = 5.0 V, IC = 0 A − ON CHARACTERISTICS (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Base–Emitter Turn–On Voltage hFE VCE = 3.0 V, IC = 30 mA 20 VCE = 3.0 V, IC = 100 mA 20 VCE = 3.0 V, IC = 500 mA 20 VCE(sat) IC = 500 mA, IB = 50 mA − VBE(sat) IC = 500 mA, IB = 50 mA − VBE(on) VCE = 1.0 V, IC = 500 mA − Q2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS VGS = 0 V, ID = 250 mA 20 V(BR)DSS/TJ ID = −250 µA, ref to 25°C − Zero Gate Votlage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) IDSS IGSS VGS = 0 V, VDS = 16 V, TJ = 25°C − VDS = 0 V, VGS = ±8.0 V − Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 0.4 Negative Threshold Temperature Coefficient VGS(TH)/TJ − − Drain−to−Source On Resistance RDS(ON) VGS = 4.5 V, ID = 100 mA − VGS = 2.5 V, ID = 50 mA − VGS = 1.8 V, ID = 20 mA − VGS = 1.5 V, ID = 10 mA Forward Transconductance gFS VDS = 5.0 V, ID = 100 mA − CHARGES AND CAPACITANCES Input Capacitance Output Capacitance CISS f = 1.0 MHz, VGS = 0 V, − COSS VDS = 15 V − Reverse Transfer Capacitance CRSS − Total Gate Charge Threshold Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V; − QG(TH) ID = 200 mA − Gate−to−Source Charge QGS − Gate−to−Drain Charge QGD − SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn−On Delay Time Rise Time td(ON) VGS = 4.5 V, VDD = 15 V, − tr ID = 200 mA, RG = 2 W − Turn−Off Delay Time Td(ON) − Fall Time tf − DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA − 2. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. Typ − − − − − − − − − − − Typ − 19 − − − 1.9 0.65 0.9 1.1 1.4 0.56 15.8 3.5 2.4 0.70 0.05 0.14 0.10 18 35 201 110 0.55 Max Unit − V − V − V 1.0 mA 10 mA 100 100 100 .


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