Document
Small Signal BJT and MOSFET
30 V, 500 mA, PNP BJT with 20 V, 224 mA, N−Channel MOSFET
NSM3005NZ
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Portable Devices
Q1 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current
VCEO VCBO VEBO
IC IB
30
V
40
V
5.0
V
500 mA
50
mA
Q2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady State
t≤5s Pulsed Drain Current Source Current (Body Diode)
TA = 25°C TA = 85°C TA = 25°C Tp = 10 ms
VDSS VGS ID
IDM IS
20
V
±8
V
224 mA
162
241
673 mA
120 mA
THERMAL CHARACTERISTICS
Parameter
Symbol Value Unit
Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C
Operating Junction and Storage Temperature
RqJA PD TJ, TSTG
245 0.8
−55 to 150
°C/W W
°C
Lead Temperature for Soldering Purposes
TL
260
°C
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
DATA SHEET www.onsemi.com
MARKING DIAGRAM
6
UDFN6
CASE 517AT
1 AE MG
1
mCOOLt
G
AE = Specific Device Code M = Date Code G = Pb−Free Package
(Note: Microdot may be in either location) *Date Code orientation may vary depending
upon manufacturing location.
PIN CONNECTIONS
Pin 6 BJT Collector
Pin 5 MOSFET
Gate
Pin 4 MOSFET
Source
BJT Collector
MOSFET Drain
Bottom View
Pin 1 BJT Emitter
Pin 2 BJT Base
Pin 3 MOSFET
Drain
ORDERING INFORMATION
Device NSM3005NZTAG
Package
UDFN6 (Pb−Free)
Shipping†
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
June, 2023 − Rev. 4
Publication Order Number: NSM3005NZ/D
NSM3005NZ
Q1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 100 mA
40
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
30
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 100 mA
5.0
Collector Cutoff Current
ICBO
VCB = 25 V, IE = 0 A
−
Emitter Cutoff Current
IEBO
VEB = 5.0 V, IC = 0 A
−
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Base–Emitter Turn–On Voltage
hFE
VCE = 3.0 V, IC = 30 mA
20
VCE = 3.0 V, IC = 100 mA
20
VCE = 3.0 V, IC = 500 mA
20
VCE(sat)
IC = 500 mA, IB = 50 mA
−
VBE(sat)
IC = 500 mA, IB = 50 mA
−
VBE(on)
VCE = 1.0 V, IC = 500 mA
−
Q2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
V(BR)DSS/TJ
ID = −250 µA, ref to 25°C
−
Zero Gate Votlage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2)
IDSS IGSS
VGS = 0 V, VDS = 16 V, TJ = 25°C
−
VDS = 0 V, VGS = ±8.0 V
−
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
0.4
Negative Threshold Temperature Coefficient VGS(TH)/TJ
−
−
Drain−to−Source On Resistance
RDS(ON)
VGS = 4.5 V, ID = 100 mA
−
VGS = 2.5 V, ID = 50 mA
−
VGS = 1.8 V, ID = 20 mA
−
VGS = 1.5 V, ID = 10 mA
Forward Transconductance
gFS
VDS = 5.0 V, ID = 100 mA
−
CHARGES AND CAPACITANCES
Input Capacitance Output Capacitance
CISS
f = 1.0 MHz, VGS = 0 V,
−
COSS
VDS = 15 V
−
Reverse Transfer Capacitance
CRSS
−
Total Gate Charge Threshold Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 15 V;
−
QG(TH)
ID = 200 mA
−
Gate−to−Source Charge
QGS
−
Gate−to−Drain Charge
QGD
−
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)
Turn−On Delay Time Rise Time
td(ON)
VGS = 4.5 V, VDD = 15 V,
−
tr
ID = 200 mA, RG = 2 W
−
Turn−Off Delay Time
Td(ON)
−
Fall Time
tf
−
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 10 mA
−
2. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures.
Typ
− − − − −
− − − − − −
Typ
− 19
− −
− 1.9 0.65 0.9 1.1 1.4 0.56
15.8 3.5 2.4 0.70 0.05 0.14 0.10
18 35 201 110
0.55
Max Unit
−
V
−
V
−
V
1.0
mA
10
mA
100
100
100
.