Power MOSFET
NTLUS4C16N
Power MOSFET
30 V, 11.7 A, Single N−Channel, 1.6x1.6x0.55 mm mCoolt UDFN6 Package
Features
• UDFN Package wi...
Description
NTLUS4C16N
Power MOSFET
30 V, 11.7 A, Single N−Channel, 1.6x1.6x0.55 mm mCoolt UDFN6 Package
Features
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving Ultra Low RDS(on) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Power Load Switch Wireless Charging DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipation (Note 1)
t≤5s
Steady State
TA = 25°C TA = 85°C TA = 25°C TA = 25°C
VDSS VGS ID
PD
30 ±12 9.4 6.8 11.7 1.53
V V A
W
t ≤ 5 s TA = 25°C
Continuous Drain Current (Note 2)
Steady State
TA = 25°C TA = 85°C
Power Dissipation (Note 2)
TA = 25°C
Pulsed Drain Current
tp = 10 ms
MOSFET Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
ID
PD IDM TJ, TSTG IS TL
2.37 6.1 4.4 0.65 28 -55 to 150
2.0 260
A
W A °C
A °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recom...
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