NTND31015NZ

NTND31015NZ Small Signal MOSFET 20 V, 200 mA, Dual N−Channel, 0.65 mm x 0.90 mm x 0.4 mm XLLGA−6 Package Features Dual N−Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 0.65 mm x 0.90 mm Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Small Signal Load Switch Analog Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Products MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) tv5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD 20 V ±8 V 200 mA 140 220 125 mW tv5s 166 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDM TJ, TSTG IS TL 800 −55 to 150 200 260 mA °C mA °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% www.onsemi.com V(BR)DSS 20 V RDS(ON) MAX 1.5 W @ 4.5 V 2.0 W @ 2.5 V 3.0 W @ 1.8 V 4.5 W @ 1.5 V D1 ID Max 200 mA D2 G1 G2 N−Channel S1 MOSFET...