Document
NTND31225CZ
Small Signal MOSFET
20 V, Complementary 0.65 mm x 0.90 mm x 0.4 mm XLLGA6 Package
Features
• Advanced Trench Complementary MOSFET • Offers a Low RDS(ON) Solution in the Ultra Small
0.65 mm × 0.90 mm Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Small Signal Load Switch with Level Shift • Analog Switch • High Speed Interfacing • Optimized for Power Management in Ultra Portable Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
NMOS
VDSS
20
V
PMOS
−20
Gate-to-Source Voltage
NMOS
VGSS
±8
V
PMOS
±8
N−Channel Continuous Drain Current (Note 1)
P−Channel Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State
t≤5s Steady State
t≤5s Steady State
TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C
ID ID PD
220 158 253 −127 −91 −146 125
mA mA mW
t≤5s
166
Pulsed Drain Current NMOS PMOS
tp = 10 ms IDM
846 −488
mA
Source Current (Body Diode)
IS 200 mA −200
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TJ, TSTG
TL
−55 to 150
260
°C °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
www.onsemi.com
V(BR)DSS
N−Channel 20 V
P−Channel −20 V
RDS(ON) MAX 1.5 W @ 4.5 V 2.0 W @ 2.5 V 3.0 W @ 1.8 V 4.5 W @ 1.5 V 5.0 W @ −4.5 V 6.0 W @ −2.5 V 7.0 W @ −1.8 V 10.0 W @ −1.5 V
ID Max 220 mA
−127 mA
DEVICE SYMBOL D1
S2
G1 G2
S1 NMOS
D2 PMOS
MARKING DIAGRAM
XLLGA6 Case 713AC
L M
LM
1 = Specific Device Code = Date Code
PINOUT DIAGRAM
6 D1
S1 1
5 G2
G1 2
4 S2
D2 3
(Bottom View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 0
1
Publication Order Number: NTND31225CZ/D
NTND31225CZ
THERMAL RESISTANCE RATINGS Parameter
Symbol
Junction-to-Ambient (Note 2) Steady State t≤5s
RqJA
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq), 1 oz copper
Max
998 751
Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
FET
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current ON CHARACTERISTICS
V(BR)DSS IDSS
N P N
P
IGSS
N P
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID = −250 mA
VGS = 0 V, VDS = 5 V
TJ = 25°C TJ = 85°C
VGS = 0 V, VDS = 16 V
TJ = 25°C
VGS = 0 V, VDS = −5 V
TJ = 25°C TJ = 85°C
VGS = 0 V, VDS = −16 V
TJ = 25°C
VGS = 0 V, VDS = ±5 V
VGS = 0 V, VDS = ±5 V
20 −20
V
50 nA 200 100
−50 −200 −100
±100 ±100
nA
Gate Threshold Voltage
VGS(TH)
N
VGS = VDS, ID = 250 mA
0.4
1.0 V
P
VGS = VDS, ID = −250 mA
−0.4
−1.0
Drain-to-Source On Resistance
RDS(ON)
N
VGS = 4.5 V, ID = 100 mA
0.8 1.5
W
VGS = 2.5 V, ID = 50 mA
1.1 2.0
VGS = 1.8 V, ID = 20 mA
1.4 3.0
VGS = 1.5 V, ID = 10 mA
1.8 4.5
P VGS = −4.5 V, ID = −100 mA
2.1 5.0
VGS = −2.5 V, ID = −50 mA
2.7 6.0
VGS = −1.8 V, ID = −20 mA
3.6 7.0
VGS = −1.5 V, ID = −10 mA
4.2 10.0
Forward Transconductance
gFS N
VDS = 5 V, ID = 125 mA
0.48 S
P VDS = −5 V, ID = −125 mA
0.35
Forward Diode Voltage
VSD
N
VGS = 0 V, IS = 10 mA
0.6 1.0
V
P VGS = 0 V, IS = −10 mA
−0.6 −1.0
3. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com 2
NTND31225CZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
FET
Test Condition
Min Typ Max Unit
CAPACITANCES
Input Capacitance Output Capacitance
CISS COSS
N
VGS = 0 V, f = 1 MHz, VDS = 15 V
12.3 pF 3.4
Reverse Capacitance
CRSS
2.5
Input Capacitance Output Capacitance
CISS COSS
P
VGS = 0 V, f = 1 MHz, VDS = −15 V
12.8 2.8
Reverse Capacitance
CRSS
2.0
SWITCHING CHARACTERISTICS, VGS = 4.5 V
Turn-On Delay Time Rise Time
td(ON) tr
N
VGS = 4.5 V, VDS = 15 V, ID = 200 mA, RG = 2 W
16.5 ns 25.5
Turn-Off Delay Time
td(OFF)
142
Fall Time
tf
80
Turn-On Delay Time Rise Time
td(ON) P VGS = −4.5 V, VDS = −15 V, tr ID = −200 mA, RG = 2 W
37 71
Turn-Off Delay Time
td(OFF)
280
Fall Time
tf
171
3. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteri.