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NTND31225CZ Dataheets PDF



Part Number NTND31225CZ
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Small Signal MOSFET
Datasheet NTND31225CZ DatasheetNTND31225CZ Datasheet (PDF)

NTND31225CZ Small Signal MOSFET 20 V, Complementary 0.65 mm x 0.90 mm x 0.4 mm XLLGA6 Package Features • Advanced Trench Complementary MOSFET • Offers a Low RDS(ON) Solution in the Ultra Small 0.65 mm × 0.90 mm Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Small Signal Load Switch with Level Shift • Analog Switch • High Speed Interfacing • Optimized for Power Management in Ultra Portable Products MAXIMUM RATINGS (TJ = 25°C unless otherwise spe.

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NTND31225CZ Small Signal MOSFET 20 V, Complementary 0.65 mm x 0.90 mm x 0.4 mm XLLGA6 Package Features • Advanced Trench Complementary MOSFET • Offers a Low RDS(ON) Solution in the Ultra Small 0.65 mm × 0.90 mm Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Small Signal Load Switch with Level Shift • Analog Switch • High Speed Interfacing • Optimized for Power Management in Ultra Portable Products MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage NMOS VDSS 20 V PMOS −20 Gate-to-Source Voltage NMOS VGSS ±8 V PMOS ±8 N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C ID ID PD 220 158 253 −127 −91 −146 125 mA mA mW t≤5s 166 Pulsed Drain Current NMOS PMOS tp = 10 ms IDM 846 −488 mA Source Current (Body Diode) IS 200 mA −200 Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TJ, TSTG TL −55 to 150 260 °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. www.onsemi.com V(BR)DSS N−Channel 20 V P−Channel −20 V RDS(ON) MAX 1.5 W @ 4.5 V 2.0 W @ 2.5 V 3.0 W @ 1.8 V 4.5 W @ 1.5 V 5.0 W @ −4.5 V 6.0 W @ −2.5 V 7.0 W @ −1.8 V 10.0 W @ −1.5 V ID Max 220 mA −127 mA DEVICE SYMBOL D1 S2 G1 G2 S1 NMOS D2 PMOS MARKING DIAGRAM XLLGA6 Case 713AC L M LM 1 = Specific Device Code = Date Code PINOUT DIAGRAM 6 D1 S1 1 5 G2 G1 2 4 S2 D2 3 (Bottom View) ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2015 November, 2015 − Rev. 0 1 Publication Order Number: NTND31225CZ/D NTND31225CZ THERMAL RESISTANCE RATINGS Parameter Symbol Junction-to-Ambient (Note 2) Steady State t≤5s RqJA 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq), 1 oz copper Max 998 751 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol FET Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS V(BR)DSS IDSS N P N P IGSS N P VGS = 0 V, ID = 250 mA VGS = 0 V, ID = −250 mA VGS = 0 V, VDS = 5 V TJ = 25°C TJ = 85°C VGS = 0 V, VDS = 16 V TJ = 25°C VGS = 0 V, VDS = −5 V TJ = 25°C TJ = 85°C VGS = 0 V, VDS = −16 V TJ = 25°C VGS = 0 V, VDS = ±5 V VGS = 0 V, VDS = ±5 V 20 −20 V 50 nA 200 100 −50 −200 −100 ±100 ±100 nA Gate Threshold Voltage VGS(TH) N VGS = VDS, ID = 250 mA 0.4 1.0 V P VGS = VDS, ID = −250 mA −0.4 −1.0 Drain-to-Source On Resistance RDS(ON) N VGS = 4.5 V, ID = 100 mA 0.8 1.5 W VGS = 2.5 V, ID = 50 mA 1.1 2.0 VGS = 1.8 V, ID = 20 mA 1.4 3.0 VGS = 1.5 V, ID = 10 mA 1.8 4.5 P VGS = −4.5 V, ID = −100 mA 2.1 5.0 VGS = −2.5 V, ID = −50 mA 2.7 6.0 VGS = −1.8 V, ID = −20 mA 3.6 7.0 VGS = −1.5 V, ID = −10 mA 4.2 10.0 Forward Transconductance gFS N VDS = 5 V, ID = 125 mA 0.48 S P VDS = −5 V, ID = −125 mA 0.35 Forward Diode Voltage VSD N VGS = 0 V, IS = 10 mA 0.6 1.0 V P VGS = 0 V, IS = −10 mA −0.6 −1.0 3. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NTND31225CZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol FET Test Condition Min Typ Max Unit CAPACITANCES Input Capacitance Output Capacitance CISS COSS N VGS = 0 V, f = 1 MHz, VDS = 15 V 12.3 pF 3.4 Reverse Capacitance CRSS 2.5 Input Capacitance Output Capacitance CISS COSS P VGS = 0 V, f = 1 MHz, VDS = −15 V 12.8 2.8 Reverse Capacitance CRSS 2.0 SWITCHING CHARACTERISTICS, VGS = 4.5 V Turn-On Delay Time Rise Time td(ON) tr N VGS = 4.5 V, VDS = 15 V, ID = 200 mA, RG = 2 W 16.5 ns 25.5 Turn-Off Delay Time td(OFF) 142 Fall Time tf 80 Turn-On Delay Time Rise Time td(ON) P VGS = −4.5 V, VDS = −15 V, tr ID = −200 mA, RG = 2 W 37 71 Turn-Off Delay Time td(OFF) 280 Fall Time tf 171 3. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteri.


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