NTNS3193NZ

NTNS3193NZ MOSFET – Single N-Channel, Small Signal, XLLGA3, 0.62 x 0.62 x 0.4 20 V, 224 mA Features Single N−Channel MOSFET Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm) Low RDS(on) Solution in 0.62 x 0.62 mm Package 1.5 V Gate Voltage Rating These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Small Signal Load Switch Analog Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Products MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Steady Current (Note 1) State Power Dissipation (Note 1) t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD 20 V ±8.0 V 224 mA 162 241 120 mW t ≤ 5 s TA = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDM TJ, TSTG IS TL 139 673 mA -55 to °C 150 120 mA 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 1) RθJA 1040 °C/W Junction-to-Ambient – t ≤ 5 s ...