NTNS4C69N

MOSFET – Single, N-Channel, Small Signal, SOT-883 (XDFN3), 1.0 x 0.6 x 0.4 mm 30 V, 1000 mA NTNS4C69N Features Single N−Channel MOSFET Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for Extremely Thin Environments such as Portable Electronics Low RDS(on) Solution in Ultra Small 1.0 x 0.6 mm Package 1.8 V Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Side Switch High Speed Interfacing Level Shift and Translate Optimized for DC−DC Converter Power Management in Ultra Portable Solutions MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Steady Current (Note 1) State Power Dissipation (Note 1) t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD 30 ±12 1000 721 1050 178 Units V V mA mW t ≤ 5 s TA = 25°C 187 Pulsed Drain Current tp = 10 ms IDM 2.6 A Operating Junction and Storage Temperature TJ, -55 to °C TSTG 150 Source Current (Body Diode) (Note 2) IS 187 mA Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 1) RθJA 703 °C/W...