Document
2SC6011 Audio Amplification Transistor
Features and Benefits
▪ Small package (TO-3P) ▪ High power handling capacity, 160 W ▪ Improved sound output by reduced on-chip impedance ▪ For professional audio (PA) applications, VCEO = 200 V
versions available ▪ Complementary to 2SA2151 ▪ Recommended output driver: 2SC4832
Package: 3 Lead TO-3P
Description
By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating.The high power-handling capacity of the TO-3Ppackage allows a smaller footprint on the circuit board design. This series of transistors is very well suited to not only multichannel applications for AV (audio-visual) amplifiers and receivers, but also parallel connection applications for PA (professional audio system) amplifiers.
Applications include the following:
▪ Single transistors for audio amplifiers ▪ Home audio amplifiers ▪ Professional audio amplifiers ▪ Automobile audio amplifiers ▪ Audio market ▪ Single transistors for general purpose
www.DataSheet4U.com
38102
2SC6011
Audio Amplification Transistor
SELECTION GUIDE
Part Number
Type
hFE Rating Range O: 50 to 100
Packing
2SC6011*
NPN
Range P: 70 tp 140
Bulk, 100 pieces
Range Y: 90 to 180
*Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y, depending upon availability.
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Characteristic
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Collector Power Dissipation
PC
Junction Temperature
TJ
Storage Temperature
Tstg
Rating 200 200 6 15 4 160 150
–55 to150
Unit V V V A A W °C °C
ELECTRICAL CHARACTERISTICS at TA = 25°C
Characteristic
Symbol
Test Conditions
Collector-Cutoff Current
ICBO
VCB = 200 V
Emitter Cutoff Current
IEBO
VEB = 6 V
Collector-Emitter Voltage
V(BR)CEO IC = 50 mA
DC Current Transfer Ratio*
hFE VCE = 4 V, IC = 3 A
Collector-Emitter Saturation Voltage
VCE(sat) IC = 5 A, IB = 0.5 A
Cutoff Frequency
fT VCE = 12 V, IE = –0.5 A
Output Capacitance
COB VCB = 10 V, IE = 0 A, f = 1 MHz
*hFE rating: 50 to 100 (O brand on package), 70 to 140 (P), 90 to 180 (Y).
Min. – –
200 50 – – –
Typ. – – – – – 20
270
Max. 10 10 – 180 0.5 – –
Unit μA μA V – V MHz pF
Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com
2
2SC6011
Audio Amplification Transistor
15
IC vs. VCE
IC (A)
10 5
0 0
15
IC vs. VBE
VCE = 4 V Continuous
10 5
IC (A) 125°C 25°C –30°C
1A 500 mA
Performance Characteristics
300 mA
200 mA
3
100 mA
50 mA
IB= 20 mA
123 VCE (V)
4
VCE(sat) (V)
VCE(sat) vs. IB
2
1
0 0
1000
IC= 10 A IC= 5 A
0.5 1.0 IB (A)
1.5
2.0
100
hFE vs. IC
VCE = 4 V Continuous
10
hFE
Typ.
00 1000
100
hFE vs. IC
VCE = 4 V Continuous 10
hFE.