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C6011 Dataheets PDF



Part Number C6011
Manufacturers Allegro
Logo Allegro
Description 2SC6011
Datasheet C6011 DatasheetC6011 Datasheet (PDF)

2SC6011 Audio Amplification Transistor Features and Benefits ▪ Small package (TO-3P) ▪ High power handling capacity, 160 W ▪ Improved sound output by reduced on-chip impedance ▪ For professional audio (PA) applications, VCEO = 200 V versions available ▪ Complementary to 2SA2151 ▪ Recommended output driver: 2SC4832 Package: 3 Lead TO-3P Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide hi.

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2SC6011 Audio Amplification Transistor Features and Benefits ▪ Small package (TO-3P) ▪ High power handling capacity, 160 W ▪ Improved sound output by reduced on-chip impedance ▪ For professional audio (PA) applications, VCEO = 200 V versions available ▪ Complementary to 2SA2151 ▪ Recommended output driver: 2SC4832 Package: 3 Lead TO-3P Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating.The high power-handling capacity of the TO-3Ppackage allows a smaller footprint on the circuit board design. This series of transistors is very well suited to not only multichannel applications for AV (audio-visual) amplifiers and receivers, but also parallel connection applications for PA (professional audio system) amplifiers. Applications include the following: ▪ Single transistors for audio amplifiers ▪ Home audio amplifiers ▪ Professional audio amplifiers ▪ Automobile audio amplifiers ▪ Audio market ▪ Single transistors for general purpose www.DataSheet4U.com 38102 2SC6011 Audio Amplification Transistor SELECTION GUIDE Part Number Type hFE Rating Range O: 50 to 100 Packing 2SC6011* NPN Range P: 70 tp 140 Bulk, 100 pieces Range Y: 90 to 180 *Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y, depending upon availability. ABSOLUTE MAXIMUM RATINGS at TA = 25°C Characteristic Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current IB Collector Power Dissipation PC Junction Temperature TJ Storage Temperature Tstg Rating 200 200 6 15 4 160 150 –55 to150 Unit V V V A A W °C °C ELECTRICAL CHARACTERISTICS at TA = 25°C Characteristic Symbol Test Conditions Collector-Cutoff Current ICBO VCB = 200 V Emitter Cutoff Current IEBO VEB = 6 V Collector-Emitter Voltage V(BR)CEO IC = 50 mA DC Current Transfer Ratio* hFE VCE = 4 V, IC = 3 A Collector-Emitter Saturation Voltage VCE(sat) IC = 5 A, IB = 0.5 A Cutoff Frequency fT VCE = 12 V, IE = –0.5 A Output Capacitance COB VCB = 10 V, IE = 0 A, f = 1 MHz *hFE rating: 50 to 100 (O brand on package), 70 to 140 (P), 90 to 180 (Y). Min. – – 200 50 – – – Typ. – – – – – 20 270 Max. 10 10 – 180 0.5 – – Unit μA μA V – V MHz pF Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 2 2SC6011 Audio Amplification Transistor 15 IC vs. VCE IC (A) 10 5 0 0 15 IC vs. VBE VCE = 4 V Continuous 10 5 IC (A) 125°C 25°C –30°C 1A 500 mA Performance Characteristics 300 mA 200 mA 3 100 mA 50 mA IB= 20 mA 123 VCE (V) 4 VCE(sat) (V) VCE(sat) vs. IB 2 1 0 0 1000 IC= 10 A IC= 5 A 0.5 1.0 IB (A) 1.5 2.0 100 hFE vs. IC VCE = 4 V Continuous 10 hFE Typ. 00 1000 100 hFE vs. IC VCE = 4 V Continuous 10 hFE.


AP65353 C6011 STP75N75F4


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