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1SS293 Dataheets PDF



Part Number 1SS293
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Diode
Datasheet 1SS293 Datasheet1SS293 Datasheet (PDF)

TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Low forward voltage Low reverse surrent Small package : VF (3) = 0.54V (typ.) : IR = 5µA (max) 1SS293 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Symbol VRM VR IFM IO P Tj Tstg Rating Unit 45 V 40 V 300 mA 100 mA 300 mW.

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TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Low forward voltage Low reverse surrent Small package : VF (3) = 0.54V (typ.) : IR = 5µA (max) 1SS293 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Symbol VRM VR IFM IO P Tj Tstg Rating Unit 45 V 40 V 300 mA 100 mA 300 mW JEDEC 125 °C EIAJ −55~125 °C TOSHIBA Weight: 0.13g ― SC−61 2−3J1A Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Circuit Test Condition ― IF = 1mA ― IF = 10mA ― IF = 100mA ― VR = 40V ― VR = 0, f = 1MHz Min Typ. Max Unit ― 0.28 ― ― 0.36 ― V ― 0.54 0.60 ― ― 5 µA ― 18 25 pF 961001EAA2 • TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 2000-09-11 1/2 1SS293 961001EAA2’ • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 2000-09-11 2/2 .


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