CS8N60FA9H

Silicon N-Channel Power MOSFET CS8N60F A9H ○R General Description： CS8N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 8 45 0.8 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤1.2Ω) l Low Gate Charge (Typical Data:29nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering 600 8 5.5 32 ±30 600 60 3.5 5.0 45 0.36 150，–55 to 150 300 V A W Ω Units V A A A V mJ mJ A V/ns W W/℃ ℃ ℃ W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2015V01 CS8N60F A9H ○R Electrica...