1SS306

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications 1SS306 Unit: mm  Small package : SC-61  Low forward voltage : VF (2) = 0.90 V (typ.)  Fast reverse recovery time : trr = 30 ns (typ.)  Small total capacitance : CT = 1.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation VRM VR IFM IO IFSM P 250 200 300 (*) 100 (*) 2 (*) 150 V V mA mA A mW Junction temperature Storage temperature Tj 125 °C JEDEC Tstg −55 to 125 °C JEITA ― SC-61 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3J1A temperature/current/voltage and the significant change in Weight: 0.013 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time ...