1SS307

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications  Low forward voltage  Low reverse current  Small total capacitance  Small package : VF = 1.0 V (typ.) : IR = 10 nA (max) : CT = 3.0 pF (typ.) : SC−59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10 ms) IFSM 1 A Power dissipation PD (Note 1, 3) 200 mW PD (Note 2) 150 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature range Tstg (Note 1) −55 to 150 °C Tstg (Note 2) −55 to 125 JEDEC TO−236MOD JEITA SC−59 TOSHIBA 2-3F1S Weight: 12 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices ...