1SS319

www.DataSheet.co.kr 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-61 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO P Tj Tstg Rating 45 40 300 (*) 100 (*) 150 (*) 125 −55∼125 Unit V V mA mA mW °C °C JEDEC ― EIAJ SC−61 Note: Using continuously under heavy loads (e.g. the application of high 2 −3J1A TOSHIBA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.013g reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (*) Unit rating. Total rating = unit rating × 1.5. Electrical Characteristics (Ta = 25°C) Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance IR CT Test Circuit Test Condition IF = 1mA IF = 10mA IF = 100mA VR = 40V VR = 0, f = 1MHz Min Typ. 0.28 0.36 0.54 ―...