1SS321

www.DataSheet.co.kr 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF = 0.42V (typ.) : IR = 500nA (max) : SC-59 (SOT-23MOD) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 12 10 150 (*) 50 (*) 1000 (*) 150 125 −55∼125 Unit V V mA mA mA mW °C °C JEDEC EIAJ SOT−23MOD SC−59 1−3G1F TOSHIBA Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012g temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (*) Unit rating. Total rating = unit rating × 1.5. Electrical Characteristics (Ta = 25°C) Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance IR CT Test Circuit Test Condition IF = 1mA IF = 10mA IF = 50mA V...