NSL05TT1

NSL05TT1 High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Peak Collector Current − Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction to Ambient RθJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction to Ambient RθJA (Note 2) Thermal Resistance, Junction to Lead #3 RθJL Junction and Storage Temperature Range TJ, Tstg 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad Max Unit −5.0 Vdc −10 Vdc −4.0 Vdc −1.0 −0.5 Adc HBM Class 3B MM Class C Max Unit 210 mW 1.7 mW/°C 595 °C/W 365 mW 2.9 mW/°C 340 °C/W 205 °C/W −55 to +150 °C http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER 3 2 1 CASE 463 SOT−416/SC−75 STYLE 1 DEVICE MARKING L3 ORDERING INFORMATION Device Package Shipping NSL05TT1 SOT−416 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: NSL05TT1/D NSL05TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC ...