Document
NSL12TT1
High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications
MAXIMUM RATINGS (TA = 25°C) Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak Collector Current – Continuous
Electrostatic Discharge
Symbol VCEO VCBO VEBO IC
ESD
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
TA = 25°C Derate above 25°C
PD (Note 1)
Thermal Resistance, Junction to Ambient
RθJA (Note 1)
Total Device Dissipation
TA = 25°C Derate above 25°C
PD (Note 2)
Thermal Resistance, Junction to Ambient
RθJA (Note 2)
Thermal Resistance, Junction to Lead #3
RθJL
Junction and Storage Temperature Range
TJ, Tstg
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 X 1.0 inch Pad
Max Unit
–12 Vdc
–20 Vdc
–4.0 Vdc
–1.0 Adc –0.5
HBM Class 3B MM Class C
Max Unit 210 mW
1.7 mW/°C 595 °C/W
365 mW
2.9 mW/°C 340 °C/W
205 °C/W
–55 to +150
°C
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12 VOLTS 1.0 AMPS PNP TRANSISTOR
COLLECTOR 3
1 BASE
2 EMITTER
3
2 1
CASE 463 SOT–416/SC–75
STYLE 1
DEVICE MARKING
L2
L2 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NSL12TT1
SOT–416 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
February, 2002 – Rev. 2
1
Publication Order Number: NSL12TT1/D
NSL12TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current (VCB = –12 Vdc, IE = 0)
ICBO
Collector–Emitter Cutoff Current (VCES = –9 Vdc)
ICES
Emitter Cutoff Current (VEB = –4.0 Vdc)
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = –100 mA, VCE = –1.0 V) (IC = –100 mA, VCE = –2.0 V) (IC = –500 mA, VCE = –2.0 V)
Collector–Emitter Saturation Voltage (Note 3)
(IC = –50 mA, IB = –0.5 mA) (IC = –100 mA, IB = –1.0 mA) (IC = –250 mA, IB = –2.5 mA) (IC = –250 mA, IB = –5.0 mA) (IC = –500 mA, IB = –5.0 mA) (IC = –500 mA, IB = –50 mA) (IC = –1.0 A, IB = –100 mA)
hFE VCE(sat)
Base–Emitter Saturation Voltage (Note 3) (IC = –150 mA, IB = –20 mA)
VBE(sat)
Base–Emitter Turn–on Voltage (Note 3) (IC = –150 mA, VCE = –3.0 V)
VBE(on)
Input Capacitance (VEB = 0 V, f = 1.0 MHz)
Cibo
Output Capacitance (VCB = 0 V, f = 1.0 MHz)
Cobo
Turn–On Time (IBI = –50 mA, IC = –500 mA, RL = 3.0 Ω)
ton
Turn–Off Time (IB1 = IB2 = –50 mA, IC = –500 mA, RL = 3.0 Ω)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% Figure 1.
toff
Min
–12
–20
–4.0
–
–
–
150 150 100
– – – – – – –
–
–
–
–
–
–
Typical
Max
Unit
–18 –28 –7.0 –0.03 –0.03 –0.01
Vdc –
Vdc –
Vdc –
mAdc –0.1
mAdc –0.1
mAdc –0.1
200 – 200 – 150 –
–0.070 –0.110 –0.190 –0.165 –0.300 –0.210 –0.410
–0.110 –0.150 –0.240
– –0.370
– –
–0.81
–0.90
–0.81
–0.875
52 –
30 –
50 –
80 –
V
V V pF pF ns ns
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NSL12TT1
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
1
0.1 IC/IB = 200 100 50
0.01 10
1 IC/IB = 100
0.1
–55°C
25°C
TA = 125°C
0.001 0.001
TA = 25°C
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Collector Emitter Saturation Voltage vs. Collector Current
0.01 0.001
0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
1
Figure 2. Collector Emitter Saturation Voltage vs. Collector Current
hFE, DC CURRENT GAIN
600
500 125°C
400
VCE = 1.0 V
300 25°C
200 TA = –55°C
100
0 0.001
0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
1
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
1 IC/IB = 50
0.1
25°C
–55°C
TA = 125°C
0.01 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Collector Emitter Saturation Voltage vs. Collector Current
1 0.9 TA = 25°C
0.8 0.7 IC = 1.0 A
0.6
0.5
0.4 50 mA
0.3
500 mA
0.2 10 mA
0.1 5.0 mA
0 0.00001 0.0001
250 mA 100 mA
0.001
0.01
0.1
1
IB, BASE CURRENT (AMPS)
Figure 5. Collector Emitter Saturation Voltage vs Base Current
VBE(sat), BASE EMITTER SATURATION VOLTAGE (V)
1.2
1 –55°C
0.8 25°C
0.6 TA = 125°C
0.4
0.2
0 0.001
0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
1
Figure 6. Base Emitter Saturation Voltage vs. Collector Current
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VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
VBE(on), BASE EMITTER TURN–ON VOLTAGE (V)
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Cobo, OUTPUT CAPACITANCE
NSL12TT1
1.2 VCE = 3.0 V
1 0.8 0.6 0.4
–55°C 25°C TA = 125°C
0.2
0 0.001
0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
1
Figure 7. Base Emitter Turn–On Voltage vs. Collector Current
Cibo, INPUT CAPACITANCE
55 50 45 40 35 30 25 20
0
f = 1 MHz
IC = 0 A TA = 25°C
12345 VEB, EMITTER BASE VOLTAGE
Figure 8. Input Capacitance
6
35 f = 1 MHz IE = 0 A
30 TA = 25°C
25
20
15
10 0 2 4 6 8 10 12 14 VCB, COLLECTOR BASE VOLTAGE Figure 9. Output Capacitance
1 D = 0.50
D = 0.20 D = 0.10 0.1 D = 0.05
D = 0.01
0.01 0.0001
SINGLE PULSE 0..