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NSL12TT1 Dataheets PDF



Part Number NSL12TT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Current Surface Mount PNP Silicon Transistor
Datasheet NSL12TT1 DatasheetNSL12TT1 Datasheet (PDF)

NSL12TT1 High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak Collector Current – Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction to Ambient RθJA (Note 1) Total.

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NSL12TT1 High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak Collector Current – Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction to Ambient RθJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction to Ambient RθJA (Note 2) Thermal Resistance, Junction to Lead #3 RθJL Junction and Storage Temperature Range TJ, Tstg 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 X 1.0 inch Pad Max Unit –12 Vdc –20 Vdc –4.0 Vdc –1.0 Adc –0.5 HBM Class 3B MM Class C Max Unit 210 mW 1.7 mW/°C 595 °C/W 365 mW 2.9 mW/°C 340 °C/W 205 °C/W –55 to +150 °C http://onsemi.com 12 VOLTS 1.0 AMPS PNP TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER 3 2 1 CASE 463 SOT–416/SC–75 STYLE 1 DEVICE MARKING L2 L2 = Specific Device Code ORDERING INFORMATION Device Package Shipping NSL12TT1 SOT–416 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2002 February, 2002 – Rev. 2 1 Publication Order Number: NSL12TT1/D NSL12TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) V(BR)CEO Collector–Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = –12 Vdc, IE = 0) ICBO Collector–Emitter Cutoff Current (VCES = –9 Vdc) ICES Emitter Cutoff Current (VEB = –4.0 Vdc) IEBO ON CHARACTERISTICS DC Current Gain (Note 3) (IC = –100 mA, VCE = –1.0 V) (IC = –100 mA, VCE = –2.0 V) (IC = –500 mA, VCE = –2.0 V) Collector–Emitter Saturation Voltage (Note 3) (IC = –50 mA, IB = –0.5 mA) (IC = –100 mA, IB = –1.0 mA) (IC = –250 mA, IB = –2.5 mA) (IC = –250 mA, IB = –5.0 mA) (IC = –500 mA, IB = –5.0 mA) (IC = –500 mA, IB = –50 mA) (IC = –1.0 A, IB = –100 mA) hFE VCE(sat) Base–Emitter Saturation Voltage (Note 3) (IC = –150 mA, IB = –20 mA) VBE(sat) Base–Emitter Turn–on Voltage (Note 3) (IC = –150 mA, VCE = –3.0 V) VBE(on) Input Capacitance (VEB = 0 V, f = 1.0 MHz) Cibo Output Capacitance (VCB = 0 V, f = 1.0 MHz) Cobo Turn–On Time (IBI = –50 mA, IC = –500 mA, RL = 3.0 Ω) ton Turn–Off Time (IB1 = IB2 = –50 mA, IC = –500 mA, RL = 3.0 Ω) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% Figure 1. toff Min –12 –20 –4.0 – – – 150 150 100 – – – – – – – – – – – – – Typical Max Unit –18 –28 –7.0 –0.03 –0.03 –0.01 Vdc – Vdc – Vdc – mAdc –0.1 mAdc –0.1 mAdc –0.1 200 – 200 – 150 – –0.070 –0.110 –0.190 –0.165 –0.300 –0.210 –0.410 –0.110 –0.150 –0.240 – –0.370 – – –0.81 –0.90 –0.81 –0.875 52 – 30 – 50 – 80 – V V V pF pF ns ns http://onsemi.com 2 NSL12TT1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 1 0.1 IC/IB = 200 100 50 0.01 10 1 IC/IB = 100 0.1 –55°C 25°C TA = 125°C 0.001 0.001 TA = 25°C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 0.01 0.001 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 1 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current hFE, DC CURRENT GAIN 600 500 125°C 400 VCE = 1.0 V 300 25°C 200 TA = –55°C 100 0 0.001 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain 1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 1 IC/IB = 50 0.1 25°C –55°C TA = 125°C 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 4. Collector Emitter Saturation Voltage vs. Collector Current 1 0.9 TA = 25°C 0.8 0.7 IC = 1.0 A 0.6 0.5 0.4 50 mA 0.3 500 mA 0.2 10 mA 0.1 5.0 mA 0 0.00001 0.0001 250 mA 100 mA 0.001 0.01 0.1 1 IB, BASE CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage vs Base Current VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.2 1 –55°C 0.8 25°C 0.6 TA = 125°C 0.4 0.2 0 0.001 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 1 Figure 6. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VBE(on), BASE EMITTER TURN–ON VOLTAGE (V) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Cobo, OUTPUT CAPACITANCE NSL12TT1 1.2 VCE = 3.0 V 1 0.8 0.6 0.4 –55°C 25°C TA = 125°C 0.2 0 0.001 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 1 Figure 7. Base Emitter Turn–On Voltage vs. Collector Current Cibo, INPUT CAPACITANCE 55 50 45 40 35 30 25 20 0 f = 1 MHz IC = 0 A TA = 25°C 12345 VEB, EMITTER BASE VOLTAGE Figure 8. Input Capacitance 6 35 f = 1 MHz IE = 0 A 30 TA = 25°C 25 20 15 10 0 2 4 6 8 10 12 14 VCB, COLLECTOR BASE VOLTAGE Figure 9. Output Capacitance 1 D = 0.50 D = 0.20 D = 0.10 0.1 D = 0.05 D = 0.01 0.01 0.0001 SINGLE PULSE 0..


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