NSL5TT1

NSL5TT1 Advance Information High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Peak Collector Current − Continuous VCEO VCBO VEBO IC −5.0 −10 −4.0 −1.0 −0.5 Vdc Vdc Vdc Adc Electrostatic Discharge ESD HBM Class 3 MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1.) 210 mW 1.7 mW/°C Thermal Resistance, Junction to Ambient RθJA (Note 1.) 595 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2.) 365 mW 2.9 mW/°C Thermal Resistance, Junction to Ambient RθJA (Note 2.) 340 °C/W Thermal Resistance, Junction to Lead #3 RθJL 205 °C/W Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad TJ, Tstg −55 to +150 °C This document contains information on a new product. Specifications and information herein are subject to change without notice. http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER 3 2 1 CASE 463 SOT−416/SC−75 STYLE 1 DEVICE MARKING L3 ORDERING INFORMATION Device Package Shipping NSL5TT1 SOT−416 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 1 1 Publication Order Number: NSL5TT1/D NSL5TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise not...