1SS350

Ordering number :EN3156A 1SS350 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Small interterminal capacitance (C=0.69pF typ). · Low forward voltage (VF=0.23V max). · Very small-sized package permitting the 1SS350applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS350] 1:Anode 2:No contact 3:Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Forward Current Junction Temperature Storage Temperature Symbol VRM IF Tj Tstg Conditions Ratings 5 30 125 –55 to +125 Unit V mA ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Forward Current Reverse Current Interterminal Capacitance Symbol VF IF IR C IF=1mA VF=0.5V VR=0.5V VR=0.2V, f=1MHz 30 25 0.69 0.9 Conditions Ratings min typ max 0.23 Unit V mA µA pF · Marking:BH Electrical Connection (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33098HA (KT)/52595GI (KOTO)/D149MO, TS 8-6183 No.3156-1/2 1SS350 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use sha...