SCH1406

SCH1406 Ordering number : EN7749A SCH1406 Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) Ratings 20 ±10 1.7 4.8 A 0.8 150 --55 to +150 Unit V V A W °C °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : KF V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V min 20 0.4 1.9 Ratings typ max Unit V 1 µA ±10 µA 1.3 V 2.8 S 160 210 mΩ 200 280 mΩ 280 390 mΩ Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com Publication Order Number: SCH1406/D SCH1406 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total ...