N-Channel Silicon MOSFET
SCH2408
Ordering number : ENA1198
SCH2408
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Fea...
Description
SCH2408
Ordering number : ENA1198
SCH2408
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
Ratings 30
±10 0.35
1.4 0.6 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : LH
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2 RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=200mA ID=200mA, VGS=4V ID=100mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz
min 30
0.4 360
Ratings typ
max
Unit
V
1 µA
±10 µA
1.3 V
600 mS
0.75
1.0 Ω
0.9 1.3 Ω
1.8 3.6 Ω
28 pF
6.0 pF
3.1 pF
Continued on next page.
© 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi...
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