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Switching diode. 1SS355 Datasheet

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Switching diode. 1SS355 Datasheet






1SS355 diode. Datasheet pdf. Equivalent




1SS355 diode. Datasheet pdf. Equivalent





Part

1SS355

Description

Switching diode



Feature


Switching Diode 1SS355 lApplication Hig h speed switching lDimensions (Unit : mm) 1.25±0.1 0.1±0.1     0.05 Datasheet  lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN . 2.1 lFeatures 1) Ultra small mold ty pe. (UMD2) 2) High reliability. lConstr uction Silicon epitaxial planar UMD2  lStructure ROHM : UMD2 0.3±0.05 0 .7±0.2     0.1 JEDEC : SOT-323 .
Manufacture

Rohm

Datasheet
Download 1SS355 Datasheet


Rohm 1SS355

1SS355; JEITA : SC-90/A dot (year week factory) lTaping specifications (Unit : mm) 4 .0±0.1 2.0±0.05 φ1.55±0.05 f1.55 0.05 0.3±0.1 3.5±0.05 1.75±0.1 2. 75 8.0±0.2 2.8±0.1 1.40±0.1 4.0±0 .1 φf11..0055 1.0±0.1 lAbsolute ma ximum ratings (Ta= 25°C) Parameter S ymbol Reverse voltage (repetitive peak ) Reverse voltage (DC) Forward current VRM VR IFM Average rectified for.


Rohm 1SS355

ward current Io Surge current (t=1s) Isurge Junction temperature Tj Stora ge temperature Tstg Limits 90 80 225 100 500 150 -55 to +150 Unit V V mA mA mA °C °C lElectrical characteristic s (Ta = 25°C) Parameter F .


Rohm 1SS355

.

Part

1SS355

Description

Switching diode



Feature


Switching Diode 1SS355 lApplication Hig h speed switching lDimensions (Unit : mm) 1.25±0.1 0.1±0.1     0.05 Datasheet  lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN . 2.1 lFeatures 1) Ultra small mold ty pe. (UMD2) 2) High reliability. lConstr uction Silicon epitaxial planar UMD2  lStructure ROHM : UMD2 0.3±0.05 0 .7±0.2     0.1 JEDEC : SOT-323 .
Manufacture

Rohm

Datasheet
Download 1SS355 Datasheet




 1SS355
Switching Diode
1SS355
lApplication
High speed switching
lDimensions (Unit : mm)
1.25±0.1
0.1±0.1
    0.05
Datasheet
 lLand size figure (Unit : mm)
0.9MIN.
lFeatures
1) Ultra small mold type.
(UMD2)
2) High reliability.
lConstruction
Silicon epitaxial planar
UMD2
 lStructure
ROHM : UMD2 0.3±0.05
0.7±0.2
    0.1
JEDEC : SOT-323
JEITA : SC-90/A
dot (year week factory)
lTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
f1.550.05
0.3±0.1
1.40±0.1
4.0±0.1
φf11..0055
1.0±0.1
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current
VRM
VR
IFM
Average rectified forward current
Io
Surge current (t=1s)
Isurge
Junction temperature
Tj
Storage temperature
Tstg
Limits
90
80
225
100
500
150
-55 to +150
Unit
V
V
mA
mA
mA
°C
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min. Typ. Max. Unit
Conditions
VF - - 1.2 V IF=100mA
IR - - 0.1 mA VR=80V
Ct - - 3 pF VR=0.5V, f=1MHz
trr - - 4 ns VR=6V, IF=10mA,RL=100W
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/5
2013.11 - Rev.E




 1SS355
1SS355
lElectrical characteristic curves
Data Sheet
100
Ta = 125°C
10
Ta = 75°C
1
Ta = 25°C
Ta = -25°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
10000
1000
Ta = 125°C
100
Ta = 75°C
10
1 Ta = 25°C
0.1
0.01
0
Ta = -25°C
10 20 30 40 50 60 70 80
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
10 910
f = 1MHz
Ta=25°C
IF=100mA
900 n=30pcs
AVE : 885.9mV
890
1
880
870
0.1
0
860
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/5
2013.11 - Rev.E




 1SS355
1SS355
lElectrical characteristic curves
Data Sheet
100
90 Ta=25°C
VR=80V
80 n=30pcs
70
60
50
40
30 AVE : 15.4nA
20
10
0
IR DISPERSION MAP
1
0.99
Ta=25°C
f=1MHz
0.98
AVE : 0.961pF
VR=0V
0.97 n=10pcs
0.96
0.95
0.94
0.93
0.92
0.91
0.9
Ct DISPERSION MAP
20
AVE : 13.6A IFSM 8.3ms
15 1cyc.
10
5
0
IFSM DISPERSION MAP
3
Ta=25°C
2.5 VR=6V
IF=10mA
RL=100W
2
AVE : 1.3ns
1.5
1
0.5
0
trr DISPERSION MAP
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/5
2013.11 - Rev.E



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