BLF10M6LS160

BLF10M6160; BLF10M6LS160 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 920 to 960 32 32 22.5 27 ACPR (dBc) 41[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (700 MHz to 1000 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications  RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range NXP Semiconductors BLF10M6160; BLF10M6LS160 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF10M6160 (SOT502A) 1 drain 2 gate 3 source BLF10M6LS160 (SOT502B) 1 drain 2 gate 3 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 1 1 [1] 3 2 2 3 sym112 1 [1] 3 2 1 2 3 sym112 Table 3. Ordering information Type number Package Name Description BLF10M6160 - flanged ceramic package; 2 moun...