BLF10M6200

BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev. 1 — 1 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 39[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (700 MHz to 1000 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications  RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range. NXP Semiconductors BLF10M6200; BLF10M6LS200 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF10M6200 (SOT502A) 1 drain 2 gate 3 source BLF10M6LS200 (SOT502B) 1 drain 2 gate 3 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 11 3 [1] 22 3 sym112 11 3 [1] 22 3 sym112 Table 3. Ordering information Type number Package Name Description BLF10M6200 - flanged ceramic package; 2 moun...