BLF174XR

BLF174XR; BLF174XRS Power LDMOS transistor Rev. 1 — 25 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Application information Test signal f (MHz) CW 108 pulsed RF 108 VDS PL Gp D (V) (W) (dB) (%) 50 600 28.5 74 50 600 29 73 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 128 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLF174XR; BLF174XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF174XR (SOT1214A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF174XRS (SOT1214B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol  1   3 [1] 4 5 2 sym117  [1]  1 3 5 4 2 sym117 Table 3. Ordering information Type number Package Name Description BLF174XR - flanged ceramic package; 2 mounting holes; 4 leads BLF174XRS - earless flanged ceramic package; 4 leads Version SOT1214A SOT1214B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating Sys...