BLF178P

BLF178P Power LDMOS transistor Rev. 2 — 16 February 2012 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band. Table 1. Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1000 50 1200 Gp (dB) 26 28.5 D (%) 75 75 1.2 Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1200 W  Power gain = 28.5 dB  Efficiency = 75 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (10 MHz to 110 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  FM transmitter applications NXP Semiconductors BLF178P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 12 1 5 34 [1] 3 4 5 2 sym117 Table 3. Ordering information Type number Package Name Description BLF178P - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating...