Band switching diode
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1SS356
Band Switching Diodes
●Outline
VR...
Description
NotNeRewcDoemsimgennsded for
1SS356
Band Switching Diodes
●Outline
VR 35 V Ct 1.2 pF
rF 0.9 Ω
●Feature High reliability Small mold type Low rF
●Inner Circuit
Data sheet
●Application High frequency switching
●Structure EPITAXIAL PLANAR
●Absolute Maximum Rating (Ta = 25ºC)
Parameter
Symbol
Forward current
IF
Reverse voltage
VR
Junction temperature
Tj
Storage temperature
Tstg
●Characteristic (Ta = 25ºC)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance between terminals
Ct
High frequencyforward resistance
rF
※Caution:static electricity
●Packaging Specification
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
Basic Ordering Unit(pcs)
3000
Taping Code
TE-17
Marking
-
Limits 100 35 125
-55 ~ 125
Conditions IF=10mA VR=25V
VR=6.0V f=1.0MHz IF=2.0mA f=100MHz
Unit mA V
℃ ℃
Min. Typ. Max. Unit - - 1.0 V - - 10 nA - - 1.2 pF - - 0.9 Ω
www.rohm.com © 2017 ROHMCo., Ltd.All rights reserved.
1/4
2017/01/24_Rev.002
1SS356
●Characteristic Curves
Data sheet
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www.rohm.com © 2017 ROHMCo., Ltd.All rights reserved.
2/4
2017/01/24_Rev.002
1SS356
●Characteristic Curves
Data sheet
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