1SS357

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-70 1SS357 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) VR IFM IO IFSM 40 V 300 mA 100 mA 1A Power dissipation P 200* mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC JEITA ― ― temperature, etc.) may cause this product to decrease in the TOSHIBA 1-1E1A reliability significantly even if the operating conditions (i.e. operating Weight: 0.004g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm. Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR (1) CT Test Circuit Test Con...