BLF2324M8LS200P
Power LDMOS transistor
Rev. 1 — 3 June 2014
Product data sheet
1. Product profile
1.1 General descrip...
BLF2324M8LS200P
Power LDMOS
transistor
Rev. 1 — 3 June 2014
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power
transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA
2300 to 2400
1740 28 60
17.2 32 37 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation (2300 MHz to 2400 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for industrial and multi carrier applications in the 2300 MHz to 2400 MHz frequency range
NXP Semiconductors
BLF2324M8LS200P
Power LDMOS
transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5
Pinning Description drain1 drain2 gate1 gate2 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
Table 3. Orderi...