BLF2425M6L180P

BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) CW 2450 10 28 180 13.3 D (%) 53.5 1.2 Features and benefits  Easy power control  Integrated ESD protection  High efficiency  Excellent thermal stability  Designed for broadband operation (2400 MHz to 2500 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as ISM and industrial heating. NXP Semiconductors BLF2425M6L(S)180P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF2425M6L180P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF2425M6LS180P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 12 1 5 34 [1] 3 5 4 2 sym117 12 1 5 34 [1] 3 5 4 2 sym117 Table 3. Ordering information Type number Package Name Description BLF2425M6L180P - flanged balanced ceramic package; 2 mounting holes; 4 le...