BLF25M612

BLF25M612; BLF25M612G Power LDMOS transistor Rev. 3 — 16 December 2014 Product data sheet 1. Product profile 1.1 General description 12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) CW 2450 28 12 19 D (%) 60 1.2 Features and benefits  High efficiency  High power gain  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications in the frequency range 2400 MHz to 2500 MHz (this product is qualified according to the solid state cooking profile) NXP Semiconductors BLF25M612; BLF25M612G Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF25M612 (SOT975B) 1 drain 2 gate 3 source [1] Simplified outline 1 Graphic symbol 1 2 3 sym112 BLF25M612G (SOT975C) 1 drain 2 gate 3 source [1] 2 1 1 2 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Descr...