BLF578XRS

BLF578XR; BLF578XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information Test signal pulsed RF f (MHz) 225 VDS PL (V) (W) 50 1400 Gp (dB) 23.5 D (%) 69 1.2 Features and benefits  Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1400 W  Power gain = 23.5 dB  Efficiency = 69 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLF578XR; BLF578XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF578XR (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF578XRS (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 12 1 5 34 [1] 3 ...