BLF642
Broadband power LDMOS transistor
Rev. 2 — 22 July 2011
Product data sheet
1. Product profile
1.1 General descr...
BLF642
Broadband power LDMOS
transistor
Rev. 2 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
A 35 W LDMOS RF power
transistor for broadcast transmitter and industrial applications. The
transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit.
Mode of operation
f
VDS
PL
(MHz)
(V) (W)
CW, class-AB
1300
32 35
2-tone, class-AB
1300
32 17.5
Gp (dB) 19 19
D IMD (%) (dBc) 63 48 28
1.2 Features and benefits
CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A : Average output power = 35 W Power gain = 19 dB Drain efficiency = 63 %
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A : Average output power = 17.5 W Power gain = 19 dB Drain efficiency = 48 % Intermodulation distortion = 28 dBc
Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLF642
Broadband power LDMOS
transistor
1.3 Applications
Communication transmitter applications in the HF to 1400 MHz frequency range Industrial applications in the HF to 1400 M...