BLF644P
Broadband power LDMOS transistor
Rev. 2 — 27 June 2014
Product data sheet
1. Product profile
1.1 General desc...
BLF644P
Broadband power LDMOS
transistor
Rev. 2 — 27 June 2014
Product data sheet
1. Product profile
1.1 General description
A 70 W LDMOS RF power
transistor for broadcast transmitter, communications and industrial applications. The
transistor is suitable for the frequency range HF to 1300 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
Table 1. Typical performance RF performance at Tcase = 25 C in a common source test circuit.
Test signal
f
VDS
PL
(MHz)
(V) (W)
CW, class-A
860 32 100
CW pulsed, class-AB
860 32 100
2-tone, class-AB
860 32 45
860 32 30
Gp (dB) 23 23.5 23 24
D IMD (%) (dBc) 65 66 50 25 40 35
1.2 Features and benefits
Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the HF to 1300 MHz frequency range Industrial applications in the HF to 1300 MHz frequency range Broadcast transmitters
NXP Semiconductors
BLF644P
Broadband power LDMOS
transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5
Pinning Description drain1 drain2 gate1 gate2 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1] DDD
Table 3. Ordering information Type number Package
Name Description BLF644...