BLF888D

BLF888D; BLF888DS UHF power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 470 to 860 115 to 134 [1] 17 40 to 48 [1] IMDshldr (dBc) 38 to 44 [2] PAR (dB) 8 [3] [1] Depending on selected channel. [2] Depending on exciter used. [3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  High efficiency  High power gain  Excellent ruggedness (VSWR  40 : 1 through all phases)  Excellent thermal stability  Integrated ESD protection  One Doherty design covers the full bandwidth from 470 MHz to 860 MHz  Internal input matching for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Broadcast transmitter applications in the UHF band  Digital broadcasting NXP Semiconductors BLF888D; BLF888DS UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF888D (SOT539A) 1 drain1 (peak) 2 drain2 (main) 3 gate1 (peak) 4 gate2 (main) 5 source BLF888DS (SOT539B) 1 drain1 (peak) 2 drain2 (ma...