BLF8G27LS-140V

BLF8G27LS-140V Power LDMOS transistor Rev. 3 — 1 May 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1300 32 45 17.4 30 32 [1] 2-carrier W-CDMA 2600 to 2700 1300 28 35 17.0 29 33 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Decoupling leads to enable improved video bandwidth (100 MHz typical)  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  Integrated ESD protection  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifier for W-CDMA base stations and multi carrier applications in the 2600 MHz to 2700 MHz frequency range NXP Semiconductors BLF8G27LS-140V Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4,5 6 7 Pinning Description drain gate source video deco...