BLF8G38LS-75V

BLF8G38LS-75V Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 3400 to 3800 600 30 20 15.5 26 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Decoupling leads to enable improved video bandwidth  Designed for broadband operation (3400 MHz to 3800 MHz)  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  Integrated ESD protection  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 3400 MHz to 3800 MHz frequency range NXP Semiconductors BLF8G38LS-75V Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 Pinning Description Simplified outline drain gate source   [1] decoupling lead decoupling l...