BLF9G20LS-160V

BLF9G20LS-160V Power LDMOS transistor Rev. 2 — 21 May 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 800 28 35.5 19.8 33.5 28 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Excellent broadband performance  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  Integrated ESD protection  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifier for multi systems base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range NXP Semiconductors BLF9G20LS-160V Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 Pinning Description Simplified outline drain gate   source [1] decoupling lead decoupling lead n.c.   n.c. [1] Connected...