IRHM57264SE

PD-93798B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) IRHM57264SE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) ID 0.066Ω 35A* International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254 Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current 35* Continuous Drain Current 26 Pulsed Drain Current À 140 Max. Power Dissipation 250 Linear Derating Factor 2.0 Gate-to-Source Voltage ±20 Single Pulse Avalanche Energy Á 500 Avalanche Current À 35 Repetitive Avalanche Energy À 25 Peak Diode Recovery dv/dt  5.0 Operating Junction -...