TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS367
High Speed Switching Application
1SS367
Unit: mm
z Small ...
TOSHIBA Diode Silicon Epitaxial
Schottky Barrier Type
1SS367
High Speed Switching Application
1SS367
Unit: mm
z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM 200 mA
Average forward current Surge current (10ms) Power dissipation
IO IFSM P*
100 mA 1A
200 mW
Junction temperature
Tj 125 °C
Storage temperature
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20 mm
Pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current Total capacitance
Symbol
VF (1) VF (2) VF (3)
IR CT
Test Circuit
Test C...